SAMSUNG Sampling High-performance MLC SSD for Enterprise
Seoul, Korea - December 21, 2010 : Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it has developed and started sampling 100, 200 and 400 gigabyte (GB) multi-level-cell (MLC) solid state drives (SSDs) for use as the primary storage in enterprise storage systems.
By employing 30-nanometer-class* MLC NAND flash chips with a Toggle DDR interface and a controller that uses a 3Gb/s (gigabits per second) SATA interface, the performance of Samsung's new MLC-based SSDs closely approaches or even exceeds some of the SLC NAND-based SSDs now in the marketplace.
The new drives can process random read commands at 43,000 input/outputs per second (IOPS) and random writes at 11,000 IOPS. This compares to a 15K RPM HDD which has an IOPS rate of 350, amounting to a 120X gain in random IOPS read performance and a 30X gain in random IOPS write performance.
Starting next month, Samsung will begin mass producing its new MLC-based enterprise drives.